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| SHINDENGEN Schottky Rectifiers (SBD) Single M1FS4 40V 1.33A FEATURES *oe Small SMT *oe Tj150*Z *oe Low VF=0.45V *oe PRRSM avalanche guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommuniction OUTLINE DIMENSIONS Case :M1F Case : Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 40 V Repetitive Peak Surge Reverse VoltagePulse width 0.5ms, duty 1/40 V RRSM 45 V Average Rectified Forward Current 50Hz sine wave, R-load Ta=25*Z*@On alumina substrate A IO 1.33 50Hz sine wave, R-load Ta=25*Z*@On glass-epoxy0.87 substrate Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z A 30 Repetitive Peak Surge Reverse Power Pulse width 10Es, Tj=25*Z PRRSM 60 W *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Forward Voltage VF IF =1.1A, Pulse measurement Reverse Current IR V=10V, Pulse measurement R Junction Capacitance R =10V Cj f=1MHz, V AEjl junction to lead Thermal Resistance AEja junction to ambient*@On alumina substrate junction to ambient*@On glass-epoxy substrate Ratings Unit Max.0.55 V Max.0.8 mA Typ.50 pF Max.20 Max.108 *Z/W Max.186 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd M1FS4 10 Forward Voltage Tl=150C [MAX] Forward Current IF [A] Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] M1FS4 Junction Capacitance f=1MHz Tl=25C TYP Junction Capacitance Cj [pF] 100 10 0.1 1 10 Reverse Voltage VR [V] M1FS4 1000 Reverse Current 100 Tl=150C [MAX] Tl=150C [TYP] Reverse Current IR [mA] 10 Tl=125C [TYP] Tl=100C [TYP] 1 Tl=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 50 60 Reverse Voltage VR [V] M1FS4 2 Reverse Power Dissipation Reverse Power Dissipation PR [W] DC D=0.05 1.5 0.1 0.2 0.3 1 0.5 0.5 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T M1FS4 1.6 1.4 Forward Power Dissipation Forward Power Dissipation PF [W] D=0.8 1.2 1 0.8 0.6 0.4 0.2 0 0.05 0.1 0.3 SIN 0.5 0.2 DC 0 0.5 1 1.5 2 2.5 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T M1FS4 2.4 Derating Curve Average Rectified Forward Current IO [A] DC 2 D=0.8 Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm 1.6 0.5 SIN 1.2 0.3 0.2 0.8 0.1 0.05 0.4 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V 0 0 IO VR tp D=tp /T T M1FS4 1.6 Derating Curve Average Rectified Forward Current IO [A] 1.4 1.2 1 0.8 0.6 0.4 0.2 0 DC D=0.8 Glass-epoxy substrate Soldering land 2mm Conductor layer 35m 0.5 SIN 0.3 0.2 0.1 0.05 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 20V 0 0 IO VR tp D=tp /T T M1FS4 50 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 40 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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